Element Substrate and Light-Emitting Device

ABSTRACT

A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.10/807,545, filed Mar. 24, 2004, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2003-086500 on Mar. 26, 2003, Serial No. 2003-139560 on May 16, 2003,and Serial No. 2003-174134 on Jun. 18, 2003 all of which areincorporated by reference.

TECHNICAL FIELD

The present invention relates to a light-emitting device in which eachof pixels is provided with a light-emitting element and a means forsupplying a current to the light-emitting element and an elementsubstrate.

BACKGROUND ART

A light-emitting element is high in visibility and optimum for lowprofiling since it emits light and does not require any backlight whichis required in a liquid crystal display device (LCD), and that has nolimitation in visual angle. Therefore, in recent years, a light-emittingdevice using the light-emitting element has attracted attention as adisplay device alternative to a CRT and the LCD. In addition, as usedherein, the light-emitting element means an element whose luminosity iscontrolled by a current or a voltage, and an OLED (Organic LightEmitting Diode), an MIM type electron source element (electron emittingelement) used in and an FED (Field Emission Display), and the like arefall within the definition.

The light-emitting device includes a panel and a module having an IC orthe like including a controller mounted on the panel. This inventionalso relates to an element substrate equivalent to one mode achievedbefore a completion of the panel in a process of manufacturing thelight-emitting device, and each of pixels in the element substrate isprovided with a means for supplying a current to the light-emittingelement.

The OLED (Organic Light Emitting Diode) which is a variation of thelight-emitting element has a layer comprising an electro-luminescentmaterial capable of obtaining luminescence (electro-luminescence)generated upon application of an electric field (hereinafter referred toas an electro-luminescent layer), an anode layer, and a cathode layer.The electro-luminescent layer is provided between the anode and thecathode and constituted of a layer or a plurality of layers. In somecases, an inorganic compound is contained in the layer or layers. Alight emission (fluorescence) generated when a singlet excitation statereturns to a ground state and a light emission (phosphorescence)generated when a triplet excitation state returns to a ground state areincluded in the luminescence in the electro-luminescent layer.

Hereinafter, a structure of a pixel of an ordinary light-emitting deviceand driving of the pixel will be described briefly. The pixel shown inFIG. 7 has a switching transistor 700, a driving transistor 701, acapacitance element 702, and a light-emitting element 703. A gate of theswitching transistor 700 is connected to a scan line 705, and a sourcethereof is connected to a signal line 704 when a drain thereof isconnected to a gate of the driving transistor 701. A source of thedriving transistor 701 is connected to a power line 706, and a drainthereof is connected to an anode of the light-emitting element 703. Acathode of the light-emitting element 703 is connected to a counterelectrode 707. The capacitance element 702 is provided in such a manneras to retain a potential difference between the gate and the source ofthe driving transistor 701. Predetermined voltages are appliedseparately to the power line 706 and the counter electrode 707, so thatthe power line 706 and the counter electrode 707 have a potentialdifference therebetween.

When the switching transistor 700 is turned on by a signal from the scanline 705, a video signal input to the signal line 704 is input to thegate of the driving transistor 701. A potential difference between apotential of the input video signal and the power line 706 becomes agate/source voltage Vgs, so that a current is supplied to thelight-emitting element 703 to cause the light-emitting element 703 toemit light.

DISCLOSURE OF THE INVENTION Problems that the Invention is to Solve

Incidentally, since a transistor using polysilicon, for example, issuitably used as a transistor of the light-emitting device since it hasa high field effect mobility and a large on-current. In turn, thetransistor using polysilicon has a drawback that a variation incharacteristics tends to occur due to a defect formed in a grainboundary.

Referring to the pixel shown in FIG. 7, when drain currents of thedriving transistors 701 vary pixel by pixel, irregularity in luminosityof the light-emitting elements 703 undesirably occurs because the draincurrents of the driving transistor 701 vary depending on the pixels.

As a measure for suppressing the variation in drain currents, a methodof increasing an L/W (L: channel length, W: channel width) of thedriving transistor 701 proposed in Japanese Patent Application No.2003-008719 is known. The drain current Ids in a saturation area of thedriving transistor 701 is given by the following equation (1).

Ids=β(Vgs−Vth)²/2  (1)

From the equation (1), since the drain current Ids in the saturationarea of the driving transistor 701 influences greatly on the currentflowing when there is a slightest change in Vgs, a precaution must betaken so as to prevent the voltage Vgs retained between the gate and thesource of the driving transistor 701 from being changed during the lightemission of the light-emitting element 703. Therefore, it is necessaryto increase capacitance of the capacitance element 702 provided betweenthe gate and the source of the driving transistor 701 and to suppress anoff-current of the switching transistor 700 as low as required.

Achievement of both of the suppression of the off-current of theswitching transistor 700 and the increase in the on-current for charginglarge capacitance is a difficult task in a transistor manufacturingprocess.

Also, there is a problem that Vgs of the driving transistor 701 ischanged by a switching of the switching transistor 700, a change inpotential of the signal line or the scan line, and so forth. The problemis attributable to stray capacitance at the gate of the drivingtransistor 701.

In view of the above problems, an object of this invention is to providea light-emitting device which does not require the suppression of anoff-current of the switching transistor 700 nor the increase incapacitance of the capacitance element 702 and is less subject to theinfluence of the stray capacitance and capable of suppressingirregularity in luminosity of light-emitting elements 703 of pixels andan element substrate.

Means for Solving the Problems

In this invention, a potential of a gate of a driving transistor isfixed, and the driving transistor is operated in a saturation area sothat a current is supplied thereto anytime. A current control transistoroperating in a linear area is provided serially with the drivingtransistor, and a video signal for transmitting a signal of emission ornon-emission of a pixel is input to a gate of the current controltransistor via a switching transistor.

A source/drain voltage Vds of the current control transistor is smallsince the current control transistor is operated in the linear area, anda slightest change in the gate/source voltage Vgs of the current controltransistor does not influence on the current flowing to thelight-emitting element. The current flowing to the light-emittingelement is decided by the driving transistor operating in the saturationarea.

ADVANTAGE OF THE INVENTION

It is possible to avoid the influences to be otherwise exerted on thecurrent flowing to the light-emitting element without increasing thecapacitance of the capacitance element provided between the gate and thesource of the current control transistor and suppressing an off-currentof the switching transistor. Further, the current is free from theinfluence of stray capacitance at the gate of the current controltransistor. Therefore, it is possible to reduce the variation factors togreatly increase image quality.

Also, since it is unnecessary to suppress the off-current of theswitching transistor, it is possible to simplify a transistormanufacturing process to contribute to a cost reduction and animprovement in yield.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing one embodiment of this invention.

FIG. 2 is a diagram showing another embodiment of this invention.

FIG. 3 is a diagram showing a general outline of an external circuit anda panel.

FIG. 4 is a diagram showing one example of a signal line drivingcircuit.

FIG. 5 is a diagram showing one example of a top view of this invention.

FIG. 6 is a diagram showing one example of an electronic appliance towhich this invention is applicable.

FIG. 7 is a diagram showing a conventional example.

FIG. 8 is a diagram showing another example of the top view of thisinvention.

FIG. 9 is a diagram showing one example of a sectional structure of thisinvention.

FIG. 10 is a diagram showing one example of an operation timing of thisinvention.

FIG. 11 is a diagram showing another example of the sectional structureof this invention.

FIG. 12 is a diagram showing another embodiment of this invention.

FIG. 13 is a diagram showing another example of the top view of thisinvention.

FIG. 14 is a diagram showing another embodiment of this invention.

FIG. 15 is a diagram showing another embodiment of this invention.

FIG. 16 is a diagram showing another example of the top view of thisinvention.

FIG. 17 is a diagram showing another example of the top view of thisinvention.

FIG. 18 is a diagram showing another example of the sectional structureof this invention.

FIG. 19 is a diagram showing another example of the sectional structureof this invention.

FIG. 20 is a diagram showing another example of the top view of thisinvention.

FIG. 21 is an illustration of pixel driving methods of this invention.

FIG. 22 is an illustration of driving methods of an active matrix typelight-emitting device.

FIG. 23 is an illustration of driving methods classified according to avideo signal using a voltage and a video signal using a current.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of this invention will be described withreference to the drawings. Note that this invention can be carried outas various different embodiments, and those skilled in the art willreadily understand that it is possible to modify modes and details ofthe embodiments without departing from the sprit and the scope of theinvention.

Embodiment 1

One embodiment of a pixel included in a light-emitting device of thisinvention is shown in FIG. 1. The pixel shown in FIG. 1 has a transistor(switching transistor) 101 used as a switching element for controllingan input of a video signal to the pixel, and a driving transistor 102for controlling a value of a current flowing to a light-emitting element104, and a current control transistor 103 for controlling a supply ofthe current to the light-emitting element 104. The pixel may be providedwith a capacitance element 105 for maintaining a potential of the videosignal, as is the case with this embodiment.

The driving transistor 102 and the current control transistor 103 areidentical in conductivity. In this invention, the driving transistor 102is operated in a saturation area while the current control transistor103 is operated in a linear area.

Further, an L of the driving transistor 102 may be longer than a Wthereof, and an L of the current control transistor 103 may be equal toor shorter than a W thereof. More preferably, a ratio of the L of thedriving transistor 102 to the W thereof may be 5 or more. Also, whenL1/W1:L2/W2=X:1 holds (wherein, a channel length of the drivingtransistor 102, a channel width of the driving transistor 102, a channellength of the current control transistor 103 and a channel width of thecurrent control transistor 103 are represented by L1, W1, L2, and W2),it is preferable to keep X in the range of 5 to 6,000. For instance,L1/W1=500 μm/3 μm, and L2/W2=3 μm/100 μm.

Either one of an enhancement transistor or a depletion transistor may beused as the driving transistor 102.

Also, either one of an N-type transistor or a P-type transistor may beused as the switching transistor 101.

A gate of the switching transistor 101 is connected to a scan line Gj(j=1 to y). A source of the switching transistor 101 is connected to asignal line Si (i=1 to x) when a drain of the switching transistor 101is connected to a gate of the current control transistor 103. A gate ofthe driving transistor 102 is connected to a second power line Wi (i=1to x). The driving transistor 102 and the current control transistor 103are connected to a first power line Vi (i=1 to x) and the light-emittingelement 104 in such a manner that a current supplied from the firstpower line Vi (i=1 to x) is supplied to the light-emitting element 104as a drain current for the driving transistor 102 and the currentcontrol transistor 103. In this embodiment, a source of the currentcontrol transistor 103 is connected to the first power line Vi (i=1 tox), and a drain of the driving transistor 102 is connected to a pixelelectrode of the light-emitting element 104.

The source of the driving transistor 102 may be connected to the firstpower line Vi (i=1 to x), and the drain of the current controltransistor 103 may be connected to the pixel of the light-emittingelement 104.

The light-emitting element 104 is formed of an anode, a cathode, and anelectro-luminescent layer provided therebetween. In the case where theanode is connected to the driving transistor 102 as shown in FIG. 1, theanode serves as the pixel electrode while the cathode serves as acounter electrode. A potential difference is set between the counterelectrode of the light-emitting element 104 and the first power line Vi(i=1 to x) so that a current in a forward bias direction is supplied tothe light-emitting element 104. In addition, the counter electrode isconnected to a third power line.

The capacitance element 105 has two electrodes, one of which isconnected to the first power line Vi (i=1 to x) and the other isconnected to the gate of the current control transistor 103. Thecapacitance element 105 is provided for the purpose of maintaining apotential difference between the electrodes of the capacitance element105 when the switching transistor 101 is in a non-selection state(off-state). Note that this invention is not limited to the constitutionincluding the capacitance element 105 shown in FIG. 1, and it ispossible to use a constitution which does not include the capacitanceelement 105.

In FIG. 1, the P-type transistors are used as the driving transistor 102and the current control transistor 103 and the drain of the drivingtransistor 102 is connected to the anode of the light-emitting element104. In the case of using N-type transistors as the driving transistor102 and the current control transistor 103, the source of the drivingtransistor 102 is connected to the cathode of the light-emitting element104. In this case, the cathode of the light-emitting element 104 servesas the pixel electrode and the anode thereof serves as the counterelectrode.

Next, a method of driving the pixel shown in FIG. 1 will be described.Operation of the pixel shown in FIG. 1 can be divided into a writeperiod and a data retention period.

When the scan line Gj (j=1 to y) is selected in the write period, theswitching transistor 101 whose gate is connected to the scan line Gj(j=1 to y) is turned on. Then, a video signal is input to the signalline Si (i=1 to x) to be input to the gate of the current controltransistor 103 via the switching transistor 101. Note that the drivingtransistor 102 is always in an on-state because its gate is connected tothe first power line Vi (i=1 to x).

In the case where the current control transistor 103 is turned on by thevideo signal, a current is supplied to the light-emitting element 104via the first power line Vi (i=1 to x). Here, since the current controltransistor 103 operates in the linear area, the current flowing to thelight-emitting element 104 is decided depending on the drivingtransistor 102 operating in the saturation area and a voltage/currentcharacteristic of the light-emitting element 104. The light-emittingelement 104 emits light having luminosity corresponding to the suppliedcurrent.

In the case where the current control transistor 103 is turned off bythe video signal, no current is supplied to the light-emitting element104 so that the light-emitting element 104 does not emit light.

In the data retention period, a potential of the scan line Gaj (j=1 toy) is so controlled as to turn off the switching transistor 101, so thata potential of the video signal written during the write period ismaintained. Since the potential of the video signal is maintained by thecapacitance element 105 in the case where the current control transistor103 is turned on during the write period, the current supply to thelight-emitting element 104 is maintained. In contrast, because thepotential of the video signal is maintained by the capacitance element105 when the current control transistor 103 is turned off during thewrite period, the current supply to the light-emitting element 104 isnot performed.

An element substrate is equivalent to one mode achieved before acompletion of a formation of the light-emitting element in the course ofmanufacturing the light-emitting device of this invention.

A transistor formed by using monocrystalline silicon, a transistor usingan SOI, and a thin film transistor using polycrystalline silicon oramorphous silicon may be used as the transistors of this invention. Atransistor using an organic semiconductor and a transistor using acarbon nanotube may also be used. Each of the transistors provided inthe pixel of the light-emitting device of this invention may have asingle gate structure, a double gate structure, or a multi-gatestructure having more than 2 gate electrodes.

With the above-described constitution, the current control transistor103 is operated in the linear area to achieve a small source/drainvoltage Vds of the current control transistor 103, and a slightfluctuation in the gate/source voltage Vgs of the current controltransistor 103 does not influence on the current flowing to thelight-emitting element 104. The current flowing to the light-emittingelement 104 is decided by the driving transistor 102 operating in thesaturation area. Therefore, it is unnecessary to increase thecapacitance of the capacitance element 105 provided between the gate andthe source of the current control transistor 103 nor to suppress theoff-current of the switching transistor 101 to keep the current flowingto the light-emitting element 104 free from adverse effects. Also, thecurrent flowing to the light-emitting element 104 is free from adverseeffects of stray capacitance at the gate of the current controltransistor 103. Since the factors for fluctuation is thus reduced, it ispossible to greatly increase image quality.

In addition, since the active matrix type light-emitting device iscapable of maintaining the current supply to the light-emitting elementfor a certain period of time after the input of the video signal, it hasflexibility toward a large size panel and high definition and isbecoming a mainstream product for near future. Specific pixel structuresof the active matrix type light-emitting devices which have beenproposed vary depending light-emitting device manufactures, and each ofthem has its specific technical contrivance. Shown in FIG. 22 is asystematic illustration of types of driving methods of the active matrixtype light-emitting device.

As shown in FIG. 22, the driving methods in the active matrix typelight-emitting device are generally divided into those using a digitalvideo signal and those using an analog video signal. The analoglight-emitting devices are further divided into those using currentmodulation wherein a value of a current to be supplied to thelight-emitting element is modulated in an analog manner and those usingtime modulation wherein gradation is expressed by changing a length ofeach of on and off of an inverter. The current modulation typelight-emitting devices can be divided into those having a Trcharacteristic correction circuit and those do not have the Trcharacteristic correction circuit. The Tr characteristic correctioncircuit is a circuit for correcting a variation in characteristics ofdriving transistors, and some Tr characteristic correction circuitscorrect only a threshold value while other Tr characteristic correctioncircuits correct a current value (threshold value, mobility, and soforth).

The light-emitting devices having the Tr characteristic correctioncircuit classified into the current modulation type can be divided intothose correcting the threshold value by voltage programming and thosecorrecting the current value by current programming. The voltageprogramming is used for correcting a fluctuation in threshold value ofthe driving transistor. The current programming is used for correcting afluctuation in current value (including threshold value, mobility, andso forth) of the driving transistor. The video signal is input by acurrent. The light-emitting element is a current driving element, and itis more straightforward to use the current value as date because lightemission luminosity hinges upon the current.

The light-emitting devices correcting the current value by the currentprogramming can be divided into those of a current mirror type and thosedo not use any current mirror. The current mirror type has a pixelcircuit using a current mirror circuit, and a transistor for setting acurrent is provided separately from a transistor for supplying acurrent. Identical characteristics of the two transistors constituting amirror are a major premise. The light-emitting device without currentmirror does not use the current mirror circuit, and one transistorperforms the current setting and the current supply.

The light-emitting devices classified into the digital light-emittingdevice can be divided into those of an area gradation and those of atime gradation. The area gradation is used for performing a gradationdisplay by selecting among weights 1:2:4:8 and so forth set in lightemission areas of sub-pixels provided in a pixel. The time gradation isused for performing a gradation display by selecting among weights1:2:4:8 and so forth set in light emission periods of sub-framesprovided in one frame.

The time gradation is divided into a DPS (Display Period Separated)driving and an SES (Simultaneous Erasing Scan) driving. In the DPSdriving, the sub-frame is constituted of an addressing period and alighting period. The DPS driving is disclosed in M. Mizukami et al.,6-Bit Digital VGA OLED, SID '00 Digest, p. 912. In the SES driving, itis possible to overlap the addressing period with the lighting period byusing an erasing transistor, so that the lighting period of thelight-emitting element is increased. The SES driving is disclosed in K.Inukai et al., 4.0-in. TFT-OLED Displays and a Novel Digital DrivingMethod, SID '00 Digest, p. 924.

The SES driving is divided into a constant current driving and aconstant voltage driving. The constant current driving is used fordriving a light-emitting element with a constant current, so that theconstant current is supplied irrelevant from a change in resistance ofthe light-emitting element. The constant voltage driving is used fordriving a light-emitting element with a constant voltage.

The light-emitting device of the constant current driving is dividedinto a light-emitting device with Tr characteristic correction circuitand a light-emitting device without Tr characteristic correctioncircuit. A light-emitting device (CCT1) driven by the method disclosedin PCT publication NO. WO 03/027997 and a light-emitting device (CCSP)driven by the method disclosed in Japanese Patent Application No.2002-056555 are included in the light-emitting device with Trcharacteristic correction circuit. The light-emitting device without Trcharacteristic correction circuit is further divided into a long channellength driving Tr type and a fixed gate potential for light emissiontype. The long channel length driving Tr type is disclosed in JapanesePatent Application No. 2002-025065. The long channel length driving Trtype is used for suppressing a characteristics variation in drivingtransistors during the constant current driving. By greatly elongatingthe gate length, it is unnecessary to use Vgs near the threshold value,thereby suppressing a fluctuation in value of the current flowing to thelight-emitting element of each of pixels.

The fixed gate potential for light emission is used for fixing apotential of a gate of a driving transistor during the light emissionperiod of the light emission element at a value with which the drivingtransistor is turned on to keep Vgs of the driving transistor at aconstant value, thereby improving display defect. Data are input to agate of a current control transistor disposed serially with the drivingtransistor. There is a long channel length driving Tr type includedamong the light-emitting devices of the fixed gate potential for lightemission type. The light-emitting device of this invention is classifiedunder the long channel length driving Tr type using the fixed gatepotential for light emission.

Shown in FIG. 23 is an illustration of driving methods classifiedaccording to a video signal using a voltage and a video signal using acurrent. As shown in FIG. 23, the driving methods are divided into thosewherein a video signal to be input to the pixel is at a constant voltage(CV) in the light emission of the light-emitting element and thosewherein a video signal to be input to the pixel is at a constant current(CC) in the light emission of the light-emitting element. Those whereinthe video signal is the constant current (CV) are divided into a drivingmethod wherein a voltage applied to the light-emitting element has aconstant value (CVCV) and a driving method wherein a current applied tothe light-emitting element has a constant value (CCCC).

Embodiment 2

In this embodiment, a mode of pixels provided in the light-emittingdevice of this invention, which is different from that of FIG. 1, willbe described.

A pixel shown in FIG. 2 has a light-emitting element 204, a switchingtransistor 201, a driving transistor 202, a current control transistor203, and a transistor 206 (erasing transistor) for forcibly turning offthe current control transistor 203. The pixel may be provided with acapacitance element 205 in addition to the above elements.

The driving transistor 202 and the current control transistor 203 areidentical in conductivity. In this invention, the driving transistor 202is operated in a saturation area while the current control transistor203 is operated in a linear area.

Further, an L of the driving transistor 202 may be longer than a Wthereof, and an L of the current control transistor 203 may be equal toor shorter than a W thereof. More preferably, a ratio of the L of thedriving transistor 202 to the W thereof may be 5 or more.

Either one of an enhancement transistor or a depletion transistor may beused as the driving transistor 202.

Either one of an N-type transistor or a P-type transistor may be used asthe switching transistor 201 and the erasing transistor 206.

A gate of the switching transistor 201 is connected to a first scan lineGaj (j=1 to y). A source of the switching transistor 201 is connected toa signal line Si (i=1 to x) when a drain of the switching transistor 201is connected to a gate of the current control transistor 203. A gate ofthe erasing transistor 206 is connected to a second scan line Gej (j=1to y), and a source thereof is connected to a first power line Vi (i=1to x) when a drain thereof is connected to the gate of the currentcontrol transistor 203. A gate of the driving transistor 202 isconnected to a second power line Wi (i=1 to x). The driving transistor202 and the current control transistor 203 are connected to the firstpower line Vi (i=1 to x) and the light-emitting element 204 in such amanner that a current supplied from the first power line Vi (i=1 to x)is supplied to the light-emitting element 204 as a drain current of thedriving transistor 202 and the current control transistor 203. In thisembodiment, a source of the current control transistor 203 is connectedto the first power line Vi (i=1 to x), and a drain of the drivingtransistor 202 is connected to a pixel electrode of the light-emittingelement 204.

The source of the driving transistor 202 may be connected to the firstpower line Vi (i=1 to x), and the drain of the current controltransistor 203 may be connected to the pixel electrode of thelight-emitting element 204.

The light-emitting element 204 is formed of an anode, a cathode, and anelectro-luminescent layer provided between the anode and the cathode. Inthe case where the anode is connected to the driving transistor 202 asshown in FIG. 2, the anode serves as the pixel electrode while thecathode serves as a counter electrode. A potential difference is setbetween the counter electrode of the light-emitting element 204 and thefirst power line Vi (i=1 to x) so that a current in a forward biasdirection is supplied to the light-emitting element 204. In addition,the counter electrode is connected to a third power line.

The capacitance element 205 has two electrodes, one of which isconnected to the first power line Vi (i=1 to x) and the other isconnected to the gate of the current control transistor 203.

In FIG. 2, P-type transistors are used as the driving transistor 202 andthe current control transistor 203, and the drain of the drivingtransistor 202 is connected to the anode of the light-emitting element204. In the case of using N-type transistors as the driving transistor202 and the current control transistor 203, the source of the drivingtransistor 202 is connected to the cathode of the light-emitting element204. In this case, the cathode of the light-emitting element 204 servesas the pixel electrode, and the anode thereof serves as the counterelectrode.

Operation of the pixel shown in FIG. 2 can be divided into a writeperiod, a data retention period, and an erasing period. Operations ofthe switching transistor 201, the driving transistor 202, and thecurrent control transistor 203 in the write period and data retentionperiod are the same as those of FIG. 1.

Shown in FIG. 21(A) is an operation when the current control transistor203 is turned on by a video signal during the write period, and shown inFIG. 21(B) is an operation when the current control transistor 203 is inan off-state during the write period. Shown in FIG. 21(C) is anoperation when the current control transistor 203 is in an on-stateduring the data retention period, and shown in FIG. 21(D) is anoperation during the erasing period. In addition, in order to facilitateunderstanding of the operations, the switching transistor 210, thecurrent control transistor 203, and the erasing transistor 206 used asswitching elements are illustrated in FIGS. 21(A) to 21(D) as switches.

When the first scan line Gaj (j=1 to y) is selected during the writeperiod, the switching transistor 201 whose gate is connected to thefirst scan line Gaj (j=1 to y) is turned on. Then, a video signal inputto a signal line Si (i=1 to x) is input to the gate of the currentcontrol transistor 203 via the switching transistor 201. Since the gateof the driving transistor 202 is connected to the first power line Vi(i=1 to x), the driving transistor 202 is always in the on-state.

In the case where the current control transistor 203 is turned on by thevideo signal, a current is supplied to the light-emitting element 204via the first power line Vi (i=1 to x) as shown in FIG. 21(A). Here,since the current control transistor 203 operates in the linear area,the current flowing to the light-emitting element 204 is decideddepending on the driving transistor 202 operating in the saturation areaand a voltage/current characteristic of the light-emitting element 204.The light-emitting element 204 emits light having luminositycorresponding to the supplied current.

In the case where the current control transistor 203 is turned off bythe video signal as shown in FIG. 21(B), no current is supplied to thelight-emitting element 204 so that the light-emitting element 204 doesnot emit light.

In the data retention period, a potential of the first scan line Gj (j=1to y) is so controlled as to turn off the switching transistor 201, sothat a potential of the video signal written during the write period ismaintained. Since the potential of the video signal is maintained by thecapacitance element 205 in the case where the current control transistor203 is turned on during the write period, the current supply to thelight-emitting element 204 is maintained as shown in FIG. 21(C). Incontrast, because the potential of the video signal is maintained by thecapacitance element 205 when the current control transistor 203 isturned off during the write period, the current supply to thelight-emitting element 204 is not performed.

During the erasing period, the second scan line Gej (j=1 to y) isselected to turn on the erasing transistor 206 as shown in FIG. 21(D),so that the potential of the power line Vi (i=1 to x) is applied to thegate of the current control transistor 203 via the erasing transistor206. Therefore, the current control transistor 203 is turned off toforcibly create a state in which no current is supplied to thelight-emitting element 204.

EXAMPLES

Hereinafter, examples of this invention will be described.

Example 1

A constitution and a driving in the case where the pixel structure ofthis invention is used for an active matrix type display device will bedescribed.

Shown in FIG. 3 are a block diagram of an external circuit and aschematic view of a panel.

As shown in FIG. 3, the active matrix type display device has anexternal circuit 3004 and a panel 3010. The external circuit 3004 has anA/D converter 3001, a power unit 3002, and a signal generation unit3003. The A/D converter 3001 converts an image signal which is input asan analog signal into a digital signal (video signal) to supply thedigital signal to a signal line driving circuit 3006. The power unit3002 generates powers each having a desired voltage from a powersupplied from a battery or an electric outlet to supply the powersseparately to the signal driving circuit 3006, a scan line drivingcircuit 3007, a light-emitting element 3001, the signal generation unit3003, and so forth. The power, the image signal, and a synchronizingsignal are input to the signal generation unit 3003, and the signalgeneration unit 3003 performs conversions of various signals to generateclock signals for driving the signal line driving circuit 3006 and thescan line driving circuit 3007 and like signals.

A signal and a power sent from the external circuit 3004 are input froman FPC connecting unit 3005 disposed inside the panel 3010 to aninternal circuit and the like through an FPC.

The panel 3010 has a substrate 3008 on which the FPC connection unit3005, the internal circuit, and the light-emitting element 3011 aremounted. The internal circuit has the signal line driving circuit 3006,the scan line driving circuit 3007, and a pixel unit 3009. Though thepixel which is described in Embodiment 1 is shown in FIG. 3 by way ofexample, it is possible to use any one of the pixels described in theembodiments of this invention as the pixel unit 3009.

The pixel unit 3009 is disposed on the center of the substrate, and thesignal line driving circuit 3006 and the scan line driving circuit 3007are disposed around the pixel unit 3009. The light-emitting element 3011and a counter electrode of the light-emitting element is formed on awhole surface of the pixel unit 3009.

Shown in FIG. 4 is a block diagram showing the signal line drivingcircuit 3006 in detail.

The signal line driving circuit 3006 has a shift resistor 4002consisting of a plurality of D-flip flops 4001, data latch circuits4003, latch circuits 4004, level shifters 4005, buffers 4006, and thelike.

Signals used in this example as those input to the signal line drivingcircuit 3006 are a clock signal line (S-CK), a reverse clock signal line(S-CKB), a start pulse (S-SP), a video signal (DATA), and a latch pulse.

Sampling pulses are output from the shift register 4002 sequentially inaccordance with timings of the clock signal, the clock reverse signal,and the start pulse. The sampling pulses are input to the data latchcircuit 4003, so that the video signal is fetched and retained at thetiming of the input. This operation is performed for each of columnssequentially from left to right.

After a completion of the video signal retention in the data latchcircuit 4003 of the last column, the latch pulse is input during ahorizontal retrace period, so that the video signals retained in thedata latch circuits 4003 are transferred simultaneously to the latchcircuits 4004. After that, the signals are level-shifted in the levelshifters 4005 and reshaped in the buffers 4006 to be outputsimultaneously to the signal lines S1 to Sn. Here, an H level and an Llevel are input to the pixels in columns selected by the scan linedriving circuit 3007 to control emission and non-emission of thelight-emitting elements 3011.

Though the active matrix type display device described in this inventionhas the panel 3010 and the external circuit 3004 which are independentfrom each other, they may be integrally formed on an identicalsubstrate. Also, though the display device using the OLEDs is describedby way of example in this example, light-emitting elements other thanthe OLEDs may be used for the light-emitting device. Also, the levelshifters 4005 and the buffers 4006 are not necessarily disposed insidethe signal line driving circuit 3006.

Example 2

In this example, one example of a top view of the pixels shown in FIG. 2will be described. Shown in FIG. 5 is the pixel top view of thisexample.

Denoted by 5001 is a signal line, denoted by 5002 is a first power line,denoted by 5001 is a second power line, denoted by 5004 is a first scanline, and denoted by 5003 is a second scan line. In this example, thesignal line 5001, the first power line 5002, and the second power line5011 are formed from an identical electro-conductive film, and the firstscan line 5004 and the second scan line 5003 are formed from anidentical electro-conductive film. Denoted by 5005 is a switchingtransistor, and a part of the first scan line 5004 functions as a gateelectrode of the switching transistor 5005. Denoted by 5006 is anerasing transistor, and a part of the second scan line 5003 functions asa gate electrode of the erasing transistor 5006. Denoted by 5007 is adriving transistor, and denoted by 5008 is a current control transistor.The driving transistor 5007 has a wound active layer used formaintaining an L/W thereof at a value larger than that of the currentcontrol transistor 5008. For instance, the size of the drivingtransistor 5007 may be set to L=200 nm and W=4 nm, while the size of thecurrent control transistor 5008 may be set to L=6 nm and W=12 nm.Denoted by 5009 is a pixel electrode, and light is emitted in an area(light-emitting area) 5010 which overlaps with an electro-luminescentlayer and a cathode (both not shown).

The top view of this invention is not more than one example, and it isneedless to say that this invention is not limited thereto.

Example 3

In this example, another example of the top view of the pixels shown inFIG. 2 will be described. Shown in FIG. 8 is the pixel top view of thisexample.

Denoted by 8001 is a signal line, denoted by 8002 is a first power line,denoted by 8011 is a second power line, denoted by 8004 is a first scanline, and denoted by 8003 is a second scan line. In this example, thesignal line 8001, the first power line 8002, and the second power line8011 are formed from an identical electro-conductive film, and the firstscan line 8004 and the second scan line 8003 are formed from anidentical electro-conductive film. Denoted by 8005 is a switchingtransistor, and a part of the first scan line 8004 functions as a gateelectrode of the switching transistor 8005. Denoted by 8006 is anerasing transistor, and a part of the second scan line 8003 functions asa gate electrode of the erasing transistor 8006. Denoted by 8007 is adriving transistor, and denoted by 8008 is a current control transistor.The driving transistor 8007 has a wound active layer used formaintaining an L/W thereof at a value larger than that of the currentcontrol transistor 8008. For instance, the size of the drivingtransistor 8007 may be set to L=200 nm and W=4 nm, while the size of thecurrent control transistor 8008 may be set to L=6 nm and W=12 nm.Denoted by 8009 is a pixel electrode, and light is emitted in an area(light-emitting area) 8010 which overlaps with an electro-luminescentlayer and a cathode (both not shown). Denoted by 8012 is a capacitanceunit formed from an insulating film disposed between the second powerline 8011 and the current control transistor 8008.

The top view of this invention is not more than one example, and it isneedless to say that this invention is not limited thereto.

Example 4

A sectional structure of a pixel will be described in this example.Shown in FIG. 9(A) is a sectional view of a pixel in the case where adriving transistor 9021 is of the P-type, and light emitted from alight-emitting element 9022 is ejected in a direction of an anode 9023.Referring to FIG. 9(A), the anode 9023 of the light-emitting element9022 is electrically connected to the driving transistor 9021, and anelectro-luminescent layer 9024 and a cathode 9025 are formed in thisorder on the anode 9023. Any known material may be used for the cathode9025 so far as it is an electro-conductive film having a small workfunction and reflecting light. Preferred examples of the material areCa, Al, CaF, MgAg, AlLi, and the like. The electro-luminescent layer9024 may be formed of either one of one layer or a stack of a pluralityof layers. In the case where the electro-luminescent layer 9024 isformed of the plurality of layers, a hole injection layer, a holetransport layer, a light-emitting layer, an electron transport layer,and an electron injection layer may be formed in this order on the anode9023. It is unnecessary to provide all of these layers. A transparentelectro-conductive film capable of transmitting light is used forforming the anode 9023, and examples of the transparentelectro-conductive film may be ITO, an electro-conductive film formed bymixing indium oxide with 2 to 20% of zinc oxide (ZnO).

A portion at which the anode 9023, the electro-luminescent layer 9024,and the cathode 9025 are overlapped with one another corresponds to thelight-emitting element 9022. In the case of the pixel shown in FIG.9(A), the light emitted from the light-emitting element 9022 is ejectedin a direction of the anode 9023 as indicated by an white arrow.

Shown in FIG. 9(B) is a sectional view of a pixel in the case where adriving transistor 9001 is of the N-type and light emitted from thelight-emitting element 9002 is ejected in a direction of an anode 9005.Referring to FIG. 9(B), a cathode 9003 of the light-emitting element9002 is electrically connected to the driving transistor 9001, and anelectro-luminescent layer 9004 and the anode 9005 are formed in thisorder on the cathode 9003. Any known material may be used for thecathode 9003 so far as it is an electro-conductive film having a smallwork function and reflecting light. Preferred examples of the materialare Ca, Al, CaF, MgAg, AlLi, and the like. The electro-luminescent layer9004 may be formed of either one of one layer or a stack of a pluralityof layers. In the case where the electro-luminescent layer 9004 isformed of the plurality of layers, an electron injection layer, anelectron transport layer, a light-emitting layer, a hole transportlayer, and a hole injection layer may be formed in this order on thecathode 9003. It is unnecessary to provide all of these layers. Atransparent electro-conductive film capable of transmitting light isused for forming the anode 9005, and examples of the transparentelectro-conductive film may be ITO, an electro-conductive film formed bymixing indium oxide with 2 to 20% of zinc oxide (ZnO).

A portion at which the cathode 9003, the electro-luminescent layer 9004,and the anode 9005 are overlapped with one another corresponds to thelight-emitting element 9002. In the case of the pixel shown in FIG.9(B), the light emitted from the light-emitting element 9002 is ejectedin a direction of the anode 9005 as indicated by an white arrow.

Though the driving transistor is electrically connected to thelight-emitting element in this example, a current control transistor maybe connected between the driving transistor and the light-emittingelement.

Example 5

One example of a driving timing using the pixel structure of thisinvention will be described using FIG. 10.

Shown in FIG. 10(A) is one example of a case of displaying a 4-bitgradation using a digital time gradation method. A length ratio amongdata retention periods Ts1 to Ts4 is set toTs1:Ts2:Ts3:Ts4=2³:2²:2¹:2⁰=8:4:2:1.

Operation will hereinafter be described. A first scan line is selectedin each of the rows sequentially in descending order during a writeperiod Tb1 to turn on switching transistors. Then, video signals areinput from signal lines to pixels, so that emission and non-emission ofthe pixels are controlled by potentials of the video signals. In the rowwhere the video signal writing has completed, transition to the dataretention period Ts1 is performed immediately. The same operation isperformed in the rows, and a period Ta1 terminates when the operation isperformed in the last row. Here, transition to a write period Tb2 isperformed in the rows sequentially in the order of termination of thedata retention period Ts1.

Here, in a sub-frame period (corresponding to Ts4 in this example)having a data retention period shorter than the write period, an erasingperiod 2102 is provided so that the next period does not startimmediately after the termination of the data retention period. Thelight-emitting elements are forcibly kept in the non-emission stateduring the erasing period.

Though the case of displaying the 4-bit gradation has been described inthis example, the number of bits and the number of gradations are notlimited thereto. The order of the light emission is not necessarily theorder of from Ts1 to Ts4, and a random order may be used, or may bedivided into a plurality of sections.

Shown in FIG. 10(B) are examples of a write pulse and an erasing pulse.The erasing pulse is input to each of rows as illustrated as an erasingpulse 1 and may be retained by a capacitance unit during the erasingperiod or an H level may be input all through the erasing period asillustrated as an erasing pulse 2. The pulses shown in FIG. 10(B) areused in the case where both of the switching transistor and the erasingtransistor are of the N-type, and, in the case where both of theswitching transistor and the erasing transistor are of the P-type, the Hlevel and the L level of the pulses shown in FIG. 10(B) are reversed.

Example 6

The display device using the light-emitting device of the invention canbe used in display portions of various electronic apparatuses. Inparticular, the display device of the invention is desirably applied toa mobile device that preferably consumes less power.

Electronic apparatuses using the display device of the invention includea portable information terminal (a cellular phone, a mobile computer, aportable game machine, an electronic book, and the like), a videocamera, a digital camera, a goggle display, a display device, anavigation system, and the like. Specific examples of these electronicapparatuses are shown in FIGS. 6A to 6D.

FIG. 6A illustrates a display device which includes a housing 6001, anaudio output portion 6002, a display portion 6003, and the like. Thelight-emitting device of the invention can be applied to the displayportion 6003. Note that the display device includes all the informationdisplay devices for personal computers, television broadcast reception,advertisement, and the like.

FIG. 6B illustrates a mobile computer which includes a main body 6101, astylus 6102, a display portion 6103, operation keys 6104, an externalinterface 6105, and the like. The light-emitting device of the inventioncan be applied to the display portion 6103.

FIG. 6C illustrates a game machine which includes a main body 6201, adisplay portion 6202, operation keys 6203, and the like. Thelight-emitting device of the invention can be applied to the displayportion 6202.

FIG. 6D illustrates a cellular phone which includes a main body 6301, anaudio output portion 6302, a display portion 6304, operation switches6305, an antenna 6306, and the like. The light-emitting device of theinvention can be applied to the display portion 6304.

As described above, an application range of the light-emitting device ofthe invention is so wide that the invention can be applied to electronicapparatuses in various fields.

Example 7

Using FIG. 11, a sectional structure of a pixel of the light-emittingdevice of this invention will be described. Shown in FIG. 11 is adriving transistor 7001 which is formed on a substrate 7000. The drivingtransistor 7001 is covered with a first interlayer insulating film 7002,and a color filter 7003 formed from a resin or the like and a wiring7004 electrically connected to a drain of the driving transistor 7001via a contact hole are formed on the first interlayer insulating film7002. A current control transistor may be provided between the drivingtransistor 7001 and the wiring 7004.

A second interlayer insulating film 7005 is formed on the firstinterlayer insulating film 7002 in such a manner as to cover the colorfilter 7003 and the wiring 7004. A silicon oxide film, a silicon nitridefilm, or a silicon oxide nitride film formed by plasma CVD or sputteringor a stack of these films formed by plasma CVD or sputtering may be usedas the first interlayer insulating film 7002 or the second interlayerinsulating film 7005. Also, a film obtained by stacking a silicon oxidenitride film wherein a molar ratio of oxygen is higher than that ofnitrogen on a silicon oxide nitride film wherein a molar ratio ofnitrogen is higher than that of oxygen may be used as the firstinterlayer insulating film 7002 or the second interlayer insulating film7005. Alternatively, an organic resin film may be used as the firstinterlayer insulating film 7002 or the second interlayer insulating film7005.

A wiring 7006 electrically connected to the wiring 7004 via a contacthole is formed on the second interlayer insulating film 7005. A part ofthe wiring 7006 functions as an anode of a light-emitting element. Thewiring 7006 is formed in such a manner as to overlap with the colorfilter 7003 with the second interlayer insulating film 7005 beingsandwiched therebetween.

An organic resin film 7008 to be used as a partition is formed on thesecond interlayer insulating film 7005. The organic resin film has anopening, and the wiring 7006 functioning as the anode, anelectro-luminescent layer 7009, and a cathode 7010 are formed in such amanner as to overlap with one another on the opening to form thelight-emitting element 7011. The electro-luminescent layer 7009 isformed of a single light-emitting layer or has a structure that aplurality of layers including the light-emitting layer are stacked. Aprotection film may be formed on the organic resin film 7008 and thecathode 7010. In this case, a film less subject to permeation ofsubstances promoting deterioration of the light-emitting element, suchas moisture, oxygen, etc., as compared with other insulating films isused as the protection film. Typically, it is desirable to use a DLCfilm, a carbon nitride film, a silicon nitride film formed by RFsputtering, or the like as the protection film. It is possible to use afilm obtained by stacking the film less subject to the permeation ofsubstances such as moisture and oxygen and a film subject to thepermeation of substances such as moisture and oxygen as compared withthe formerly mentioned film as the protection film.

The organic resin film 7008 is heated under a vacuum atmosphere so as toeliminate absorbed moisture, oxygen, and so forth before forming theelectro-luminescent layer 7009. More specifically, a heat treatment at100° C. to 200° C. is performed under a vacuum atmosphere for about 0.5to 1 hour. It is desirable to perform the heat treatment under 3×10⁻⁷Torr or less, most desirably under 3×10⁻⁸ Torr, if possible. In the caseof forming the electro-luminescent layer after subjecting the organicresin film to the heat treatment under the vacuum atmosphere, it ispossible to improve reliability by maintaining the vacuum atmosphereuntil shortly before the film formation.

It is desirable to round an edge of the opening of the organic resinfilm 7008 so that the electro-luminescent layer 7009 formed on theorganic resin film 7008 in the partially overlapping manner is notpierced at the edge. More specifically, it is desirable that a radius ofcurvature of a curve of a section of the opening of the organic resinfilm is from 0.2 to 2 μm.

With the above-described constitution, it is possible to achieve asatisfactory coverage of the electro-luminescent layer and the cathodeto be formed afterward and to prevent the wiring 7006 and the cathode7010 from being short-circuited in the hole formed in theelectro-luminescent layer 7009. Also, by mitigating stress of theelectro-luminescent layer 7009, it is possible to reduce a defect calledshrinkage, which is a reduction in light emission area, therebyenhancing the reliability.

In addition, in the example shown in FIG. 11, a positive photosensitiveacryl resin is used as the organic resin film 7008. Photosensitiveorganic resins are broadly divided into a positive type in which aportion exposed to energy rays such as light, electrons, ions is removedand a negative type in which the exposed portion remains. The negativetype organic resin film may be used in this invention. Also, the organicresin film 7008 may be formed by using photosensitive polyimide. In thecase of forming the organic resin film 7008 using a negative type acryl,the edge of the opening has a section in the form of the letter “S”.Here, it is desirable to set a radius of curvature of each of an upperend and a lower end of the opening to 0.2 to 2 μm.

A transparent electro-conductive film may be used for the wiring 7006.Usable examples of the transparent electro-conductive film is an ITO anda transparent electro-conductive film obtained by mixing 2 to 20% ofindium oxide with zinc oxide (ZnO). In FIG. 11, the ITO is used as thewiring 7006. The wiring 7006 may be polished by wiping using a CMPmethod and a polyvinyl alcohol-based porous material so as to smooth outits surface. Also, the surface of the wiring 7006 may be irradiated withultraviolet rays or treated with oxygen plasma after undergoing thepolishing using the CMP method.

Any known material may be used for the cathode 7010 so far as it is anelectro-conductive film having a thickness capable of transmitting lightand a small work function. Preferred examples of the material are Ca,Al, CaF, MgAg, AlLi, and the like. In order to obtain light from thecathode side, a method of using ITO which is reduced in work function byan addition of Li may be employed in addition to a method of thinningthe film thickness. A structure of the light-emitting element used inthis invention is not particularly limited so far as it enables lightemission from both of the anode side and the cathode side.

In practice, it is preferable to perform packaging (enclosure) with aprotection film (laminate film, ultraviolet curing resin film, etc.) ora transparent glazing material 7012 which is high in air tightness andless subject to degasification. In the packaging, the reliability of thelight-emitting element is improved by maintaining an inside of theglazing material under an inert atmosphere or disposing an moistureabsorbent (e.g., barium oxide) inside the glazing material. In thisinvention, the glazing material 7012 may be provided with a color filter7013.

Note that this invention is not limited to the above-describedmanufacturing process and that it is possible to use any known methodfor the manufacture.

Example 8

In this example, a pixel structure in the case where positions of thedriving transistor 202 and the current control transistor 203 areexchanged in the pixel shown in FIG. 2 will be described.

Shown in FIG. 12 is a circuit structure of the pixel of this example.The elements and wirings shown in FIG. 2 are denoted by the samereference numerals in FIG. 12. The pixel shown in FIG. 12 and the pixelshown in FIG. 2 has a common point that the current supplied from thefirst power line Vi (i=1 to x) is supplied to the light-emitting element204 as the drain current of the driving transistor 202 and the currentcontrol transistor 203. But the pixel shown in FIG. 12 is different fromthe pixel shown in FIG. 2 in that the source of the driving transistor202 is connected to the first power line Vi (i=1 to x), while the drainof the current control transistor is connected to the pixel electrode ofthe light-emitting element 204.

A gate/source voltage Vgs of the driving transistor 202 is fixed byconnecting the source of the driving transistor 202 to the first powerline Vi as described in this example. That is, the gate/source voltageVgs of the driving transistor 202 operating in the saturation area doesnot change and remains to be fixed even if the light-emitting element204 is degraded. Therefore, in this example, it is possible to prevent afluctuation in drain current of the driving transistor 202 operating inthe saturation area even if the light-emitting element 204 is degraded.

Example 9

In this example, one example of a top view of the pixel shown in FIG. 12will be described. Note that a resistance is provided between the pixelelectrode of the light-emitting element 204 and the drain of the currentcontrol transistor 203 in the pixel shown in FIG. 12 will be describedin this example. Shown in FIG. 13 is the top view of the pixel of thisexample.

Denoted by 5101 is a signal line, denoted by 5102 is a first power line,denoted by 5111 is a second power line, denoted by 5104 is a first scanline, and denoted by 5103 is a second scan line. In this example, thesignal line 5101, the first power line 5102, and the second power line5111 are formed from an identical electro-conductive film, and the firstscan line 5104 and the second scan line 5103 are formed from anidentical electro-conductive film. Denoted by 5105 is a switchingtransistor, and a part of the first scan line 5104 functions as a gateelectrode of the switching transistor 5105. Denoted by 5106 is anerasing transistor, and a part of the second scan line 5103 functions asa gate electrode of the erasing transistor 5106. Denoted by 5107 is adriving transistor, and denoted by 5108 is a current control transistor.Denoted by 5112 is a capacitance element, and denoted by 5113 is aresistance formed from a semiconductor film. The driving transistor 5107has a wound active layer used for maintaining an L/W thereof at a valuelarger than that of the current control transistor 5108. For instance,the size of the driving transistor 5107 may be set to L=200 nm and W=4nm, while the size of the current control transistor 5108 may be set toL=6 nm and W=12 nm. Denoted by 5109 is a pixel electrode, and light isemitted in an area (light-emitting area) where the pixel electrode 5109overlaps with an electro-luminescent layer (not shown) and a cathode(not shown).

In the case of forming the pixel electrode 5109 by forming anelectro-conductive film and then patterning the electro-conductive film,it is possible to prevent the driving transistor 5107 from beingdestroyed due to a sharp change in potential of the drain of the drivingtransistor 5107 caused by an electric charge charged on theelectro-conductive film by using the resistance 5113. Also, it ispossible to use the resistance 5113 as an electrostatic countermeasureuntil a deposition of an EL.

In addition, it is needless to say that the top view of this inventionis described only by way of example and that the invention is notlimited thereto.

Example 10

In this example, a pixel structure when pixels using the first scan lineGaj (j=1 to y) or the second scan line Gej (j=1 to y) further use thesecond power line Wj (i=1 to x) will be described using the pixel shownin FIG. 2.

A circuit diagram of the pixels of this example is shown in FIG. 14(A).The elements and the wirings shown in FIG. 2 are denoted by samereference numerals in FIG. 14(A). Note that the pixels using the firstscan line Gaj (j=1 to y) and the second scan line Gej (j=1 to y) incommon further use the second power line Wj (i=1 to x) in common. Thesecond power line Wj (i=1 to x) intersects with the signal line Si (i=1to x) and the first power line Vi (i=1 to x), and the pixels using thesecond scan line Gej (j=1 to y) in common has signal lines Si (i=1 to x)which are different from one another.

Shown in FIG. 14(B) is a pixel structure in the case of employing amethod of adjusting a white balance by applying different voltages tothe gates of the driving transistors 202 depending on a red pixel, agreen pixel, and a blue pixel. Referring to FIG. 14(B), in a pixel 210corresponding to red, a second power line Wrj for red (R) is connectedto the gate of the driving transistor 202. In a pixel 211 correspondingto green, a second power line Wgj for green (G) is connected to the gateof the driving transistor 202. In a pixel 212 corresponding to blue, apower line Wbj for blue (B) is connected to the gate of the drivingtransistor 202.

Example 11

In this example, a pixel structure in the case of providing a resistancebetween a drain of the driving transistor 202 and a light-emittingelement will be described using the pixels shown in FIGS. 14(A) and14(B).

Shown in FIG. 15(A) is the pixel structure in which the pixel shown inFIG. 14(A) is provided with a resistance. The elements and the wiringsshown in FIG. 14(A) are denoted by the same reference numerals in FIG.15(A). FIG. 15(A) is different from FIG. 14(A) in that a resistance 209is provided between the pixel electrode of the light-emitting element104 and the drain of the driving transistor 202.

Shown in FIG. 15(B) is a pixel structure in the case of employing amethod of adjusting a white balance by applying different voltages tothe gates of the driving transistors 202 depending on a red pixel, agreen pixel, and a blue pixel. Referring to FIG. 15(B), in a pixel 210corresponding to red, a second power line Wrj for red (R) is connectedto the gate of the driving transistor 202. In a pixel 211 correspondingto green, a second power line Wgj for green (G) is connected to the gateof the driving transistor 202. In a pixel 212 corresponding to blue, apower line Wbj for blue (B) is connected to the gate of the drivingtransistor 202.

In the case of forming the pixel electrode by forming anelectro-conductive film and then patterning the electro-conductive film,it is possible to prevent the driving transistor 202 from beingdestroyed due to a sharp change in potential of the drain of the drivingtransistor 202 caused by an electric charge charged on theelectro-conductive film by using the resistance 209. Also, it ispossible to use the resistance 5209 as an electrostatic countermeasureuntil a deposition of an EL.

Next, one example of a top view of the pixel shown in FIG. 15(A) will bedescribed. The top view of this example is shown in FIG. 16.

Denoted by 5201 is a signal line, denoted by 5202 is a first power line,denoted by 5211 is a second power line, denoted by 5204 is a first scanline, and denoted by 5203 is a second scan line. In this example, thesignal line 5201, and the first power line 5202 are formed from anidentical electro-conductive film, and the first scan line 5204, thesecond scan line 5203, and the second power line 5211 are formed from anidentical electro-conductive film. Denoted by 5205 is a switchingtransistor, and a part of the first scan line 5204 functions as a gateelectrode of the switching transistor 5205. Denoted by 5206 is anerasing transistor, and a part of the second scan line 5203 functions asa gate electrode of the erasing transistor 5206. Denoted by 5207 is adriving transistor, and denoted by 5208 is a current control transistor.Denoted by 5212 is a capacitance element, and denoted by 5213 is aresistance formed from a semiconductor film. The driving transistor 5207has a wound active layer used for maintaining an L/W thereof at a valuelarger than that of the current control transistor 5208. For instance,the size of the driving transistor 5207 may be set to L=200 nm and W=4nm, while the size of the current control transistor 5208 may be set toL=6 nm and W=12 nm. Denoted by 5209 is a pixel electrode, and light isemitted in an area (light-emitting area) where the pixel electrode 5209overlaps with an electro-luminescent layer (not shown) and a cathode(not shown).

Next, one example of a top view of the pixel shown in FIG. 15(B) will bedescribed. Shown in FIG. 17 is the pixel top view of this example.

Denoted by 5301 is a signal line, denoted by 5302 is a first power line,denoted by 5311 r is a second power line corresponding to a red pixel,denoted by 5311 g is a second power line corresponding to a green pixel,denoted by 5311 b is a second power line corresponding to a blue pixel,denoted by 5304 is a first scan line, and denoted by 5303 is a secondscan line. In this example, the signal line 5301 and the first powerline 5302 are formed from an identical electro-conductive film, and thefirst scan line 5304, the second scan line 5303, and the second powerlines 5311 r, 5311 g, 5311 b are formed from an identicalelectro-conductive film. Denoted by 5305 is a switching transistor, anda part of the first scan line 5304 functions as a gate electrode of theswitching transistor 5305. Denoted by 5306 is an erasing transistor, anda part of the second scan line 5303 functions as a gate electrode of theerasing transistor 5306. Denoted by 5307 is a driving transistor, anddenoted by 5308 is a current control transistor. Denoted by 5312 is acapacitance element, and denoted by 5313 is a resistance formed from asemiconductor film. The driving transistor 5307 has a wound active layerused for maintaining an L/W thereof at a value larger than that of thecurrent control transistor 5308. For instance, the size of the drivingtransistor 5307 may be set to L=200 nm and W=4 nm, while the size of thecurrent control transistor 5308 may be set to L=6 nm and W=12 nm.Denoted by 5309 is a pixel electrode, and light is emitted in an area(light-emitting area) where the pixel electrode 5309 overlaps with anelectro-luminescent layer (not shown) and a cathode (not shown).

It is needless to say that the top view of this invention is describedonly by way of example and that the invention is not limited thereto.

Since the number of transistors included in one pixel is 4 in thelight-emitting device of this invention, it is possible to set a widthacross corner to 4 to 4.3 inches, a width of an interlayer used as apartition for separating adjacent light-emitting elements to 20 μm, aVGA to (640×480) 200 dpi, and the size of the pixel to 45×135 μm.

Example 12

Shown in FIG. 18(A) is a sectional view of a pixel in the case where adriving transistor 9011 is of the N-type and light emitted from alight-emitting element 9012 is ejected in a direction of a cathode 9013.In FIG. 18(A), the cathode 9013 of the light-emitting element 9012 isformed on a transparent electro-conductive film 9017 electricallyconnected to a drain of the driving transistor 9011, and anelectro-luminescent layer 9014 and an anode 9015 are formed on thecathode 9013 in this order. A shielding film 9016 for reflecting orshielding light is formed in such a manner as to cover the anode 9015.Any known material may be used for the cathode 9013 so far as it is anelectro-conductive film having a small work function and reflectinglight. Preferred examples of the material are Ca, Al, CaF, MgAg, AlLi,and the like. Note that a thickness of the cathode 9013 is regulated toa value which allows light to pass therethrough. For instance, an Alfilm having a thickness of 20 nm may be used as the cathode 9013. Theelectro-luminescent layer 9014 may be formed of either one of one layeror a stack of a plurality of layers. The anode 9015 is not required totransmit light, and a transparent electro-conductive film such as ITO,ITSO, IZO obtained by mixing indium oxide with 2 to 20% of zinc oxide(ZnO), Ti, or TiN may be used for the anode 9015. A metal reflectinglight, for example, may be used as the shielding film 9016 withoutlimitation thereto. A resin to which a black pigment is added may beused as the shielding film 9016, for example.

A portion at which the cathode 9013, the electro-luminescent layer 9014,and the anode 9015 are overlapped with one another corresponds to thelight-emitting element 9012. In the case of the pixel shown in FIG.18(A), the light emitted from the light-emitting element 9012 is ejectedin a direction of the cathode 9013 as indicated by an white arrow.

Shown in FIG. 18(B) is a sectional view of a pixel in the case where adriving transistor 9031 is of the P-type and light emitted from thelight-emitting element 9032 is ejected in a direction of a cathode 9035.Referring to FIG. 18(B), an anode 9033 of the light-emitting element9032 is formed on a wiring 9036 electrically connected to a drain of thedriving transistor 9031, and an electro-luminescent layer 9034 and thecathode 9035 are formed on the anode 9033 in this order. With suchconstitution, when light has passed through the anode 9033, the light isreflected by the wiring 9036. Any known material may be used for thecathode 9035 so far as it is an electro-conductive film having a smallwork function and reflecting light as is the case with FIG. 18(A). Notethat a thickness of the cathode 9035 is regulated to a value whichallows light to pass therethrough. For instance, an Al film having athickness of 20 nm may be used as the cathode 9035. Theelectro-luminescent layer 9034 may be formed of either one of one layeror a stack of a plurality of layers, as is the case with FIG. 18(A). Theanode 9033 is not required to transmit light, and a transparentelectro-conductive film or Ti, or TiN may be used for the anode 9033 asis the case with FIG. 18(A).

A portion at which the anode 9033, the electro-luminescent layer 9034,and the cathode 9035 are overlapped with one another corresponds to thelight-emitting element 9032. In the case of the pixel shown in FIG.18(B), the light emitted from the light-emitting element 9032 is ejectedin a direction of the cathode 9035 as indicated by an white arrow.

In addition, though the structure that the driving transistor iselectrically connected to the light-emitting element is described inthis example, a current control transistor may be connected between thedriving transistor an the light-emitting element.

Example 13

In this example, a sectional structure of a pixel in the case where eachof a driving transistor and a current control transistor is of a bottomgate type will be described.

The transistor to be used in this invention may be formed from amorphoussilicon. Since the transistor formed from the amorphous siliconcontributes to an elimination of a process of crystallization, it ispossible to simplify a manufacturing method and to reduce a cost. Notethat a P-type amorphous silicon transistor is suitably used for thepixel of this invention since it has a higher mobility as compared withan N-type amorphous silicon transistor. In this example, a sectionalstructure of a pixel in the case of using the N-type driving transistorwill be described.

Shown in FIG. 19(A) is a sectional view of a pixel of this example.Denoted by 6501 is a driving transistor and denoted by 6502 is a currentcontrol transistor. The driving transistor 6501 has a gate electrode6503 formed on a substrate 6500 having an isolating surface, a gateinsulating film 6504 formed on the substrate 6500 in such a manner as tocover the gate electrode 6503, and a semiconductor film 6505 formed at aposition overlapping with the gate electrode 6503 with the gateinsulating film being sandwiched therebetween. The semiconductor film6505 has an impurity area 6506 a and 6506 b functioning as a source anda drain and having impurity for imparting an electro-conductivity. Theimpurity area 6506 a is connected to a wiring 6508.

The current control transistor 6502 has, like the driving transistor6501, a gate electrode 6510 formed on the substrate 6500 having theisolating surface, the gate insulating film 6504 formed on the substrate6500 in such a manner as to cover the gate electrode 6510, and asemiconductor film 6511 formed at a position overlapping with the gateelectrode 6510 with the gate insulating film 6504 being sandwichedtherebetween. The semiconductor film 6511 has an impurity area 6512 aand 6512 b functioning as a source and a drain and having impurity forimparting electro-conductivity. The impurity area 6512 a is connected,via a wiring 6513, to the impurity area 6506 b included in the drivingtransistor 6501.

The driving transistor 6501 and the current control transistor 6502 arecovered with a protection film 6507 formed from an insulating film. Thewiring 6508 is connected to an anode 6509 via a contact hall formed onthe protection film 6507. The driving transistor 6501, the currentcontrol transistor 6502, and the protection film 6507 are covered withan interlayer insulating film 6520. The interlayer insulating film 6520has an opening, and the anode 6509 is exposed in the opening Anelectro-luminescent layer 6521 and a cathode 6522 are formed on theanode 6509.

In addition, the example in which the driving transistor and the currentcontrol transistor are of the N-type is described with reference to FIG.19(A), they may be of the P-type. In this case, P-type impurity is usedfor controlling a threshold value of the driving transistor.

Example 14

In this example, one example of a top view of the pixel shown in FIG. 2will be described. The pixel top view of this example is shown in FIG.20.

Denoted by 5401 is a signal line, denoted by 5402 is a first power line,denoted by 5411 a and 5411 b are second power lines, denoted by 5404 isa first scan line, and denoted by 5403 is a second scan line. In thisexample, the signal line 5401, the first power line 5402, and the secondpower line 5411 a are formed from an identical electro-conductive film,and the first scan line 5404, the second scan line 5403, and the secondpower line 5411 b are formed from an identical electro-conductive film.Denoted by 5405 is a switching transistor, and a part of the first scanline 5404 functions as a gate electrode of the switching transistor5405. Denoted by 5406 is an erasing transistor, and a part of the secondscan line 5403 functions as a gate electrode of the erasing transistor5406. Denoted by 5407 is a driving transistor, and denoted by 5408 is acurrent control transistor. Denoted by 5412 is a capacitance element,and denoted by 5413 is a resistance formed from a semiconductor film.The driving transistor 5407 has a wound active layer used formaintaining an L/W thereof at a value larger than that of the currentcontrol transistor 5408. For instance, the size of the drivingtransistor 5407 may be set to L=200 nm and W=4 nm, while the size of thecurrent control transistor 5408 may be set to L=6 nm and W=12 nm.Denoted by 5409 is a pixel electrode, and light is emitted in an area(light-emitting area) 5410 where the pixel electrode 5409 overlaps withan electro-luminescent layer (not shown) and a cathode (not shown).

It is needless to say that the top view of this invention is describedonly by way of example and that the invention is not limited thereto.

1. A semiconductor device comprising: a light-emitting element; a firsttransistor; a second transistor; and a third transistor; wherein one ofa source and a drain of the first transistor is electrically connectedto the light-emitting element, wherein the other of the source and thedrain of the first transistor is electrically connected to one of asource and a drain of the second transistor, wherein a gate of thesecond transistor is electrically connected to one of a source and adrain of the third transistor, wherein a gate of the first transistor iselectrically connected to a first line, wherein the other of the sourceand the drain of the second transistor is electrically connected to asecond line, wherein the other of the source and the drain of the thirdtransistor is electrically connected to a third line, and wherein achannel length of the first transistor is longer than a channel width.2. The semiconductor device according to claim 1, wherein the firsttransistor comprises silicon.
 3. The semiconductor device according toclaim 1, wherein the first line is a first power line, wherein thesecond line is a second power line, and wherein the third line is asignal line.
 4. The semiconductor device according to claim 1, whereinthe first transistor has a bottom gate structure.
 5. The semiconductordevice according to claim 4, wherein the first transistor is a N-typetransistor.
 6. The semiconductor device according to claim 1, furthercomprising an insulating film over the light-emitting element, theinsulating film comprising carbon.
 7. The semiconductor device accordingto claim 1, wherein the light-emitting element comprises a firstelectrode, a light-emitting layer over the first electrode and a secondelectrode over the light-emitting layer, wherein the light-emittingelement is configured to pass light through the first electrode and thesecond electrode.
 8. The semiconductor device according to claim 1,wherein a ratio of the channel length to the channel width of the firsttransistor is 5 or more.
 9. A semiconductor device comprising: alight-emitting element; a first transistor; a second transistor; and athird transistor; wherein one of a source and a drain of the firsttransistor is electrically connected to the light-emitting element,wherein the other of the source and the drain of the first transistor iselectrically connected to one of a source and a drain of the secondtransistor, wherein a gate of the second transistor is electricallyconnected to one of a source and a drain of the third transistor,wherein the gate of the first transistor comprises a conductive film,wherein the conductive film is overlapped with a signal line, andwherein a channel length of the first transistor is longer than achannel width.
 10. The semiconductor device according to claim 9,wherein the first transistor comprises silicon.
 11. The semiconductordevice according to claim 9, wherein the light-emitting element, thefirst transistor, the second transistor and the third transistor arecomprised in a first pixel, and wherein the signal line is electricallyconnected to a second pixel.
 12. The semiconductor device according toclaim 9, wherein the first transistor has a bottom gate structure. 13.The semiconductor device according to claim 12, wherein the firsttransistor is a N-type transistor.
 14. The semiconductor deviceaccording to claim 9, further comprising an insulating film over thelight-emitting element, the insulating film comprising carbon.
 15. Thesemiconductor device according to claim 9, wherein the light-emittingelement comprises a first electrode, a light-emitting layer over thefirst electrode and a second electrode over the light-emitting layer,wherein the light-emitting element is configured to pass light throughthe first electrode and the second electrode.
 16. The semiconductordevice according to claim 9, wherein a ratio of the channel length tothe channel width of the first transistor is 5 or more.